华中科技大学翟天佑和周兴团队以原子层的二硒化钯为基础展示了其强的面内光学和电学各向异性,并通过温度调控使各向异性电子迁移率比达到8.9。此外,高灵敏度的偏振光探测及与偏振吸收光谱相似的取向反转行为被证实,表明偏振敏感的光电流检测来源于半导体本征的线性二色性。
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