Advanced Electronic Materials 热点文章排行榜Top 10 (2016年12月)

本文统计了Advanced Electronic Materials在2016年12月访问量排在前十位的文章。数据通过Wiley Online Library统计论文页面浏览量(Page Views)得出。

 

1. Recent Advances in Stretchable and Transparent Electronic Materials

通讯作者:Qibing Pei(University of California, USA)

发表时间:16 March 2016

 

2. Reliable Actual Fabric-Based Organic Light-Emitting Diodes: Toward a Wearable Display

通讯作者:Kyung Cheol Choi(Korea Advanced Institute of Science and Technology (KAIST), South Korea)

发表时间:5 September 2016

 

3. Effect of Synthesis on Quality, Electronic Properties and Environmental Stability of Individual Monolayer Ti3C2 MXene Flakes

通讯作者:Alexander Sinitskii( University of Nebraska – Lincoln, USA)

Yury Gogotsi(Drexel University, USA)

发表时间:2 November 2016

 

4. Achieving 6.7% Efficiency in P3HT/Indene-C70 Bisadduct Solar Cells through the Control of Vertical Volume Fraction Distribution and Optimized Regio-Isomer Ratios

通讯作者:S. Ravi P. Silva(University of Surrey, UK)

发表时间:15 November 2016

 

5. Highly Sensitive Pressure Sensor Based on Bioinspired Porous Structure for Real-Time Tactile Sensing

通讯作者:Taeyoon Lee(Yonsei University, Republic of Korea)

发表时间:7 November 2016

 

6. 2D Tin Monoxide—An Unexplored p-Type van der Waals Semiconductor: Material Characteristics and Field Effect Transistors

通讯作者:Ashutosh Tiwari(University of Utah, USA)

发表时间:12 February 2016

 

7. Flexible and Stretchable Oxide Electronics

通讯作者:Jong-Hyun Ahn(Yonsei University, Republic of Korea)

Bhupendra K. Sharma(Indian Institute of Science, India)

发表时间:6 July 2016

 

8. All-Carbon Thin-Film Transistors as a Step Towards Flexible and Transparent Electronics

通讯作者:成会明,孙东明(中国科学院金属研究所)

发表时间:4 October 2016

 

9. Printed, Self-Aligned Side-Gate Organic Transistors with a Sub-5 µm Gate–Channel Distance on Imprinted Plastic Substrates

通讯作者:C. Daniel Frisbie,Lorraine F. Francis(University of Minnesota, USA)

发表时间:7 November 2016

 

10. Direct Vapor Phase Growth and Optoelectronic Application of Large Band Offset SnS2/MoS2 Vertical Bilayer Heterostructures with High Lattice Mismatch

第一作者:Bo Li(中国科学院半导体研究所)

通讯作者:魏钟鸣,李京波(中国科学院半导体研究所)

发表时间:10 October 2016